Sputtering method using sputtering device

ABSTRACT

The present invention relates to a sputtering method using a sputtering device, wherein entire scan region is defined from one side to the other side of a sputtering target, and the sputtering target is scanned with a magnet moving back and forth along the entire scan region multiple times. The entire scan region of a sputtering target is divided by N parts to be uniformly eroded, such that a magnet moves back and forth along some part of the divided entire scan region. A sputtering method using a sputtering device can therefore extend an alternating cycle of a sputtering target, by virtue of improving utilization efficiency of the sputtering target through uniform erosion of the sputtering target, and can also reduce manufacturing cost.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No.13/660,263, filed on Oct. 25, 2012, which claims priority to and thebenefit of Korean Patent Application No. 10-2011-0113937 filed in theKorean Intellectual Property Office on Nov. 3, 2011 and Korean PatentApplication No. 10-2012-0024395 filed in the Korean IntellectualProperty Office on Mar. 9, 2012, the entire contents of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

(a) Technical Field

The present invention relates to a sputtering method using a sputteringdevice, and more particularly to a sputtering method using a sputteringdevice, wherein scan region of a magnet, which scans the undersurface ofa sputtering target is defined as some part of the divided entire scanregion of sputtering target and is applied in sequential order.

(b) Description of the Related Art

Generally, a sputtering device is widely used in forming thin films onsubstrates for semiconductor elements or substrates for Liquid CrystalDisplay devices.

FIG. 1 is an overview of a sputtering device. Referring to FIG. 1, thesputtering device is characterized by comprising a suscepter 102, inwhich a substrate 103 is installed within a vacuum chamber 101, a metalsputtering target 104, which is employed as deposition source on theopposite surface of the substrate 103.

The sputtering target 104 herein is fixed by a back plate 105 to providematerials for thin films to be formed on the substrate 103, a groundshield 106 is prepared along the side of the sputtering target 104, amask 107 is prepared along the periphery of a gap between the substrate103 and the sputtering target 104.

A magnet 108 to allow DC power is attached to the undersurface of theback plate 105 by a driving means 109, such that the magnet can scanback and forth the sputtering target 104.

In such a state, if inert gas argon (Ar) is supplied into the vacuumchamber 101, and DC bias is powered to the sputtering target 104, theinert gas is transformed to a state of ionized plasma, which leads toions colliding with the sputtering target 104, and thin films are formedon the substrate 103, with the sputtering target 104 emitting atoms.

At this point, the magnet 108 provides magnetic field by scanning backand forth the sputtering target 104, as shown in FIG. 2, thereby,inducing the ions to collide with the sputtering target 104.

Conventionally, however, in a scanning motion of the magnet 108,scanning speed is supposed to decrease at left side and right side ofthe sputtering target 104, allowing the magnet to stay at left side andright side relatively longer than at center part. If the magnet 108 isin a stationary state for long, the duration of exposure to the magneticfield gets longer at left side and right side than at center part of thescan region D of the magnet 108.

Namely, erosion occurs relatively more at the left side and the rightside where the duration of exposure of the magnet 108 of the sputteringtarget 103 gets relatively long than at the center.

FIG. 3 is a cross-section view along I-I′ line in FIG. 2. Referring toFIG. 3, it may be observed in sputtering target A that the thickness t₃at either side is smaller than the thickness t₂ at the center part,which means the either side have been eroded more than the center part.

Consequently, the utilization efficiency of the sputtering target of asputtering device is lessened because erosion is concentrated on leftside and right side than on center part.

In addition, a changing term of a sputtering target gets fasterdepending on the lessened utilization efficiency.

Furthermore, as the changing term of the sputtering target gets faster,manufacturing cost of forming thin film on substrate wouldcorrespondingly increase.

SUMMARY OF THE INVENTION

A sputtering method using a sputtering device, which may extend achanging term of a sputtering target, by virtue of improving utilizationefficiency of the sputtering target through uniform erosion of thesputtering target of the sputtering device is provided.

Likewise, it is intended to provide in the invention the sputteringmethod using the sputtering device, which could reduce manufacturingcost by extending the changing term of the sputtering target.

An exemplary embodiment of the present invention provides a sputteringmethod using a sputtering device, wherein entire scan region is definedfrom one side to the other side of a sputtering target, and thesputtering target is scanned with a magnet moving a magnet back andforth along the entire scan region multiple times, including: originalscanning step, wherein the entire scan region is divided into N (N≥4,wherein n is an integer) parts from the left side to the other side ofthe sputtering target along with scan direction, and original scanregion is defined from the Pth (1≤P≤N/2, wherein p is an integer) partto the (N−P+1)th part as start part and end part respectively, with themagnet scanning back and forth the original scan region at least once;and altered scanning step, wherein altered scan region is defined fromthe Qth (1≤Q≤N/2, Q≠P, wherein Q is an integer) part to the (N−Q+1)thpart as start part and end part respectively, with the magnet scanningback and forth the altered scan region at least once after the originalscanning step, and the altered scanning step is conducted at least once.It is desirable herein that the Q be P−1 or P+1 in the altered scanningstep.

At this point, in case of conducting the altered scanning step more thantwice, each start part of the altered scan region is preferably set updifferently from each other.

Moreover, in accordance with another exemplary embodiment of theinvention, a sputtering method using a sputtering device comprises stepsof: defining the entire scan region, which is divided by N (N is apositive integer) parts; defining multiple forward scan regions andmultiple backward scan regions, which are arranged to comprise at leastsome part of the divided entire scan region; defining scan cycle 1 andscan cycle 2, which are arranged by combinations of several multipleforward scan regions and several multiple backward scan regionsrespectively, wherein the scan cycle 1 is arranged in the manner thatthe first forward scan region is defined from the 1st part out of the Nparts to the Pth part out of the N parts as start part and end partrespectively, and the Ath forward scan region is defined from the Athpart out of the N parts to the (P+A−1)th part out of the N parts asstart part and end part respectively (1≤A≤(N/2), ((N/2)+1)≤P<N,(P+A−1)≤N, wherein A and P are integers); arranging multiple forwardscan regions of the scan cycle 2, in the reverse order to the multipleforward scan regions arranged in the scan cycle 1; and defining themultiple backward scan regions arranged in the scan cycle 1 and the scancycle 2 respectively in the manner that the end part of the previousforward scan region is start part and the start part of the subsequentforward scan region is end part respectively, such that a magnet has acontinuous motion, and the scan cycle 1 and the scan cycle 2 arealternately arranged appearing at least once respectively, such that themagnet moves according to the scan cycle 1 and the scan cycle 2.

In addition, in accordance with another exemplary embodiment of theinvention, a sputtering method of using a sputtering device comprisessteps of: defining the entire scan region, which is divided by N (N is apositive integer) parts; defining multiple forward scan regions andmultiple backward scan regions, which are alternately arranged tocomprise at least some part of the divided entire scan region; definingscan cycle 1 and scan cycle 2, which are arranged by combinations ofseveral multiple forward scan regions and several multiple backward scanregions respectively, wherein the scan cycle 1 is arranged in the mannerthat the first forward scan region is defined from the 1st part out ofthe N parts to the Pth part out of the N parts as start part and endpart respectively, and the Ath forward scan region is defined from theAth part out of the N parts to the (N−A+1)th part out of the N parts asstart part and end part respectively (A≤(N/2) if N is an even number,A≤(N−1)/2 if N is an odd number, 1≤A≤(N/2), wherein A is an integer);arranging multiple forward scan regions of the scan cycle 2, in thereverse order to the multiple forward scan regions arranged in the scancycle 1; and defining the multiple backward scan regions arranged in thescan cycle 1 and the scan cycle 2 respectively in the manner that theend part of the previous forward scan region is start part, and thestart part of the subsequent forward scan region is end part, such thata magnet has a continuous motion, and the scan cycle 1 and the scancycle 2 are alternately arranged at least appearing once respectively,such that the magnet moves according to the scan cycle 1 and the scancycle 2.

At this point, when alternately arranging the scan cycle 1 and the scancycle 2, a backward scan region after the last forward scan region of ascan cycle is arranged in the manner that the end part of the lastforward scan region of the scan cycle is set up as start part of thebackward scan region, and the start part of the first forward scanregion of the next scan cycle is set up as end part of the backward scanregion.

On the other hand, the individual width of the N parts is set upsubstantially the same to each other, as well as each width of the Nparts is set up substantially the same to the width of the sputteringtarget.

According to the present invention, a sputtering method using asputtering device is provided which may extend an alternating cycle ofthe sputtering target by improving utilization efficiency of asputtering target of the sputtering device.

Also, a sputtering method using a sputtering device is provided whichmay reduce manufacturing cost by extending the alternating cycle of thesputtering target.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an overview of a sputtering device,

FIG. 2 is a top view of a sputtering target and a magnet employed in aconventional sputtering method,

FIG. 3 is a cross-section view along I-I′ line of FIG. 2,

FIGS. 4 and 5 are a top view of a sputtering target and a magnetemployed in a sputtering method using a sputtering device according tothe present invention,

FIGS. 6-13 are a state diagram of a sputtering target according toexemplary embodiments of a sputtering method using a sputtering deviceof the present invention,

FIG. 14 is an overview of a sputtering device employed in a sputteringmethod using a sputtering device according to second exemplaryembodiment of the invention,

FIG. 15 is an arrangement diagram of a unit scan region according tosecond exemplary embodiment of the invention,

FIG. 16 is an erosion state diagram of a sputtering target employedaccording to a sputtering method of the invention,

FIG. 17 is an arrangement diagram of a unit scan region according tothird exemplary embodiment of the invention,

FIG. 18 is an arrangement diagram of a unit scan region according to themodified example of the third exemplary embodiment of the invention.

DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

Prior to description, elements will be representatively explained infirst exemplary embodiment, in which like reference numerals refer tolike elements throughout, and different configurations to those of firstexemplary embodiment will be described in other exemplary embodiments.

A sputtering method using a sputtering device in accordance with firstexemplary embodiment of the present invention is described in greaterdetail below, referring to accompanying drawings.

The sputtering device employed in this exemplary embodiment may besubstantially the same as that of a conventional method. Also, asputtering target employed herein employs a target formed in a linearframe as in the conventional method.

FIGS. 4 and 5 are a top view diagram of a sputtering target and a magnetemployed in a sputtering method using a sputtering device according tofirst exemplary embodiment of the present invention.

First, in a sputtering method using a sputtering device in accordancewith first exemplary embodiment of the invention, referring to FIG. 4,entire scan region is divided into N parts from left side to right sideof the sputtering target 10, along which a magnet scans back and forth.N herein is a positive integer.

Although conventional entire scan region is defined from left side toright side in order to maximize utilization efficiency of the sputteringtarget 10, some part of the sputtering target 10 may be set up as theentire scan region as necessary.

Each width of the divided parts is prepared substantially the same aseach other, and preferably, each width of the divided parts is preparedsubstantially the same to that of a magnet 20.

If each width of the divided parts is prepared substantially the same tothat of the magnet 20, over-erosion by the magnet at both sides whereerosion is concentrated on would cease, thus avoiding severe erosion onboth ends.

Subsequently, after original scan region L₁ is defined from the Pth(1≤P≤N/2, wherein P is an integer) part to the (N−P+1)th part as startpart and end part respectively, the magnet 20 scans back and forth theoriginal scan region L₁ of the sputtering target at least once for acertain period of time. The certain period of time herein may bepredetermined.

After scanning the original scan region L₁ for the certain period oftime, referring to FIG. 5, the magnet scans back and forth the alteredscan region L₂ at least once for a certain period of time, which isdefined from the Qth (1≤Q≤N/2, Q≠P, wherein Q is an integer) part to the(N−Q+1)th part as start part and end part respectively. Preferably, Qherein is (P−1) or (P+1).

Namely, it is desirable that the start point in the altered scanningstep be chosen at the closest side of the magnet to the start part inthe original scanning step to maximize utilization efficiency.

When carrying out the altered scan step more than twice, it is desirablethat the start part of the second cycle of the altered scan region isdifferent from the start part of the first cycle of the altered scanregion, and the end part of the second cycle of the altered scan regionis different from the end part of the first cycle of the altered scanregion.

A sputtering method using a sputtering device as described above is setforth with the aid of detailed example below.

Example 1

Assuming that P=1, Q=2, and altered scan region is scanned once,original scan region L₁ is defined from the 1st part to the Nth part asstart part and end part, since P=1 as indicated in FIG. 6. Likewise,altered scan region L₂ is defined from the 2nd part to the (N−1)th partas start part and end part, since Q=2 as shown in FIG. 8.

In this configuration, as shown in FIG. 6, a magnet scans the originalscan region L₁ which is defined from the 1st part to the Nth part of thesputtering target 10 at least once for a certain period of time.

FIG. 7 is a cross-section view along II-II′ line of FIG. 6. Referring toFIG. 7, if the original scan region L₁ is scanned for a certain periodof time, erosion occurs concentrated on the 1st part and the Nth part.

After the original scan region L₁ for a certain period of time, as shownin FIG. 8, a magnet scans the altered scan region L₂, which is definedfrom the 2nd part to the (N−1)th part of the sputtering target 10 atleast once for a certain period of time.

FIG. 9 is a cross-section view along III-III′ line of FIG. 6. Referringto FIG. 9, if the altered scan region L₂ is scanned for a certain periodof time, erosion occurs concentrated on the 2nd part and the (N−1)thpart.

Namely, if the width of the sputtering target 10 is examined afterscanning separately the original scan region L₁ and the altered scanregion L₂, since the 1st part and the Nth part of the original scanregion L₁ are not included in the altered scan region L₂, additionalconcentration of erosion rarely occurs on the 1st part and the Nth partof the sputtering target 10 while scanning the altered scan region L₂.Therefore, utilization efficiency could be improved by dispersing theparts where erosion is concentrated on throughout the target, comparedto a prior method.

Example 2

Assuming that P=2, Q=1, and altered scan region is scanned once,original scan region (L₁′ of FIG. 10) is defined such as L₂ of FIG. 8,and the altered scan region (L₂′ of FIG. 10) is defined such as L₁ ofFIG. 6 to scan a sputtering target 20.

If scanned as such, as shown in FIG. 10, after the original scan regionL₁′ is scanned for a certain period of time, erosion occurs concentratedon the 2nd part and the (N−1)th part, while after the altered scanregion L₂′ is scanned, erosion occurs concentrated on the 1st part andthe Nth part.

Accordingly, utilization efficiency of the sputtering target could beimproved by dispersing the parts where erosion is concentrated onthroughout the target likewise in the example recited above, sinceerosion is to be occurring on the outermost parts after a certain periodof time.

Example 3

Assuming that P=1, Q₁=2, Q₂=3, and altered scan region is scanned twice,original scan region L₁ is defined from the 1st part to the Nth part asstart part and end part respectively as shown in FIG. 6, and alteredscan region L₂ is defined from the 2nd part to the (N−1)th part as startpart and end part respectively, since Q₁=2 as shown in FIG. 8.

Likewise, altered scan region L₃ is defined from the 3rd part to the(N−2)th part as start part and end part respectively, since Q₂=3 asshown in FIG. 12.

As in the example 1, the original scan region L₁ and the altered scanregion L₂ are scanned. Thereafter, the other altered scan region L₃ isscanned from the 3rd part to the (N−2)th part of a sputtering target 10.

As illustrated in FIG. 13, since the 1st part, the 2nd part, the(N−1)th, and the Nth part of the sputtering target 10 are located on theouter part of the altered scan region L₃, additional concentration oferosion rarely occurs.

As well as in the aforementioned example, utilization efficiency of thesputtering target could also be enhanced by dispersing the parts whereerosion is concentrated on throughout the target in this exemplaryembodiment.

The examples above are stated with the most typical cases, andutilization efficiency of the sputtering target could be increased byscanning the sputtering target in the manner that a number of thealtered scan regions are set up as necessary, and each start part ofaltered scan regions is set up differently from each other.

A sputtering method using a sputtering device according to secondexemplary embodiment of the present invention is described in greaterdetail below.

FIG. 14 is a top view of a sputtering device employed in a sputteringmethod using a sputtering device according to second exemplaryembodiment of the invention.

In the second exemplary embodiment as well as in the first exemplaryembodiment of the invention, referring to FIG. 14, entire scan region isdivided by n parts from left side to right side of the sputteringtarget, along which a magnet scans back and forth (n is a positiveinteger).

Although the entire scan region is defined from left side to right sidein order to maximize utilization efficiency of the sputtering target 10,some part of the sputtering target 10 may be set up as the entire scanregion as necessary. Furthermore, it is preferable that each width ofthe divided parts is prepared substantially the same as in the examplesmentioned above.

In the sputtering method using a sputtering device according to thesecond exemplary embodiment of the present invention, multiple forwardscan region and multiple backward scan region are defined respectivelyas some part of the divided entire scan region as above.

In addition, scan cycle 1 and scan cycle 2 are arranged by combinationsof several multiple forward scan regions and several multiple backwardscan regions respectively, and the multiple forward scan regions and themultiple backward scan regions comprised in each scan cycle arealternately arranged.

The multiple forward scan regions are arranged in the scan cycle 1 inthe manner that the first forward scan region is defined from the 1 stpart out of the n parts to the Pth part out of the n parts as start partand end part respectively, and the Ath forward scan region is definedfrom the Ath part out of the n parts to the (P+A−1)th part out of the nparts as start part and end part respectively, until (P+A), which is endpart of the last forward scan region becomes n (1≤A≤(n/2),((n/2)+1)≤P<n, wherein A and P are integers).

The multiple forward scan regions in the scan cycle 2 are arranged inthe reverse order to the multiple forward scan regions arranged in thescan cycle 1.

Further, the multiple backward scan regions which are arranged in thescan cycle 1 and the scan cycle 2 are arranged alternating with themultiple forward scan regions, in the manner that end part of theprevious forward scan region is set up as start part of the backwardscan region, and start part of the subsequent forward scan region is setup as end part of the backward scan region, such that a magnet 10 moveswith a continuous motion.

On the other hand, the scan cycle 1 and the scan cycle 2 are alternatelyarranged at least appearing once respectively, such that the magnetmoves with a continuous motion.

Backward scan region after the last forward scan region of a scan cycleis arranged in the manner that end part of the last forward scan regionof the scan cycle is set up as start part of the backward scan region,and start part of the first forward scan region of the next scan cycleis set up as end part of the backward scan region, such that scanningcontinuity of the magnet can be guaranteed.

To be more specific referring to FIG. 15, scan region is divided into 10parts, and each comprises combinations of several multiple forward scanregions and several multiple backward scan regions, which are properlymixed to be arranged in scan cycle 1 and scan cycle 2.

The 1st forward scan region arranged in the scan cycle 1 is provided inthe manner that the 1st part and the 6th part out of the 10 dividedparts are defined as start part and end part respectively.

The 2nd forward scan region is provided in the manner that the 2nd partand the 7 (i.e. 6+2−1)th part out of the 10 divided parts are defined asstart part and end part respectively. The 3rd forward scan region isprovided in the manner that the 3rd part and the 8 (i.e. 6+3−1)th partout of the 10 divided parts are defined as start part and end partrespectively.

Forward scan regions are thus sequentially provided in the same mannerto the 5th forward scan region, the end part of which is the 10 (i.e.6+5−1)th part as the scan region is divided into 10 parts.

Moreover, in scan cycle 1, backward scan regions are arrangedalternating with the multiple forward scan regions, in the manner thatend part of the previous forward scan region is set up as start part,and start part of the subsequent forward scan region is set up as endpart, such that scanning continuity of the magnet can be guaranteed.

Forward scan regions in the scan cycle 2 are arranged in the reverseorder to those of the scan cycle 1 described above, and backward scanregions in the scan cycle 2 are arranged in the same manner.

On the other hand, scan cycle 1 and scan cycle 2 may be alternatelyarranged at least appearing once respectively, and when alternatelyarranged, backward scan region K can be comprised to be arranged betweenthe last forward scan region of the scan cycle 1 and the last forwardscan region of the scan cycle 2, thereby achieving continuous scanningof a magnet.

If the magnet scans along the scan cycle 1 and the scan cycle 2 arrangedas above, as shown in FIG. 16, utilization efficiency of the sputteringtarget can be improved through uniform erosion of a sputtering target inthe parts (i.e. start part and end part) where the speed of the magnetdecreases.

A sputtering method using a sputtering device according to thirdexemplary embodiment of the present invention is set forth in detailbelow.

In a sputtering method using a sputtering device according to thirdexemplary embodiment of the invention, as in second exemplaryembodiment, entire scan region is divided into n parts from left side toright side of the sputtering target, and multiple forward scan regionsand multiple backward scan regions are arranged to comprise at leastsome part of the divided entire scan region.

In addition, scan cycle 1 and scan cycle 2 are arranged by combinationsof several multiple forward scan regions and several multiple backwardscan regions respectively.

The scan cycle 1 is arranged in the manner that the first forward scanregion is defined from the 1 st part out of the n parts to the nth partout of the n parts as start part and end part respectively, and the Athforward scan region is defined from the Ath part out of the n parts tothe (n−A+1)th part out of the n parts as start part and end partrespectively (A≤(n/2) if n is an even number, A≤(n−1)/2 if n is an oddnumber, 1≤A≤(n/2), wherein a is an integer).

Multiple forward scan regions in the scan cycle 2 are arranged in thereverse order to the multiple forward scan regions arranged in the scancycle 1.

Furthermore, multiple backward scan regions arranged in scan cycle 1 andscan cycle 2 are alternately arranged with forward scan regions.

The backward scan regions are arranged in the manner that end part ofthe previous forward scan region is set up as start part of the backwardscan region, and start part of the subsequent forward scan region is setup as end part of the backward scan region, such that scanningcontinuity of the magnet can be guaranteed.

On the other hand, the scan cycle 1 and the scan cycle 2 are alternatelyarranged at least appearing once respectively, such that the magnetmoves with a continuous motion.

As in second exemplary embodiment, backward scan region after the lastforward scan region of a scan cycle is arranged in the manner that endpart of the last forward scan region of the scan cycle is set up asstart part of the backward scan region, and start part of the firstforward scan region of the next scan cycle is set up as end part of thebackward scan region, such that scanning continuity of the magnet can beguaranteed.

FIG. 17 is an arrangement diagram of a scan region using the sputteringdevice according to the third exemplary embodiment of the invention. Tobe more specific referring to FIG. 17, scan region is divided into 10parts, and each comprises combinations of several multiple forward scanregions and several multiple backward scan regions, which are properlymixed to be arranged in scan cycle 1 and scan cycle 2.

The 1st forward scan region arranged in the scan cycle 1 is provided inthe manner that the 1 st part and the 10th part out of the 10 dividedparts are defined as start part and end part respectively.

The 2nd forward scan region is provided in the manner that the 2nd partand the 9 (i.e. 10+2−1)th part out of the 10 divided parts are definedas start part and end part respectively. The 3rd forward scan region isprovided in the manner that the 3rd part and the 8 (i.e. 10+3−1)th partout of the 10 divided parts are defined as start part and end partrespectively.

Forward scan regions are thus sequentially provided in the same mannerto the 5th forward scan region, the end part of which is the 5 (i.e.10/2)th part as the 10 is an even number.

Moreover, in scan cycle 1, backward scan region is arranged alternatingwith the multiple forward scan regions, in the manner that end part ofthe previous forward scan region is set up as start part, and start partof the subsequent forward scan region is set up as end part, such thatscanning continuity of the magnet can be guaranteed.

Forward scan regions in the scan cycle 2 are arranged in the reverseorder to those of the scan cycle 1 described above, and backward scanregions in the scan cycle 2 are arranged in the same manner.

On the other hand, as shown in the second exemplary embodiment, scancycle 1 and scan cycle 2 may be alternately arranged at least appearingonce respectively, and when alternately arranged, backward scan region(k) can be comprised to be arranged between the last forward scan regionof the scan cycle 1 and the first forward scan region of the scan cycle2, thereby achieving continuous scanning of a magnet.

In addition, a sputtering method using a sputtering device according tothe modified example of the third exemplary embodiment of the inventionis described below. In a sputtering method using a sputtering deviceaccording to the modified example of the third exemplary embodiment,when compared to the third exemplary embodiment, entire scan region isdivided into odd numbered parts, i.e. N is an odd number.

In the modified example of the third exemplary embodiment, since theentire scan region is divided into odd numbered parts, scan cycle 1 andscan cycle 2 are provided as in the second exemplary embodiment, and theAth forward scan region is arranged until A becomes (N−1)/2. Detaileddescription of the other features shall be omitted, as they are the sameas in the third exemplary embodiment.

To be more specific referring to FIG. 18, it is assumed that entire scanregion is divided into 9 parts.

Start part of the 4th forward scan region, which is the last forwardscan region of scan cycle 1 is set up as the 4th part, which is deducedfrom (9−1)/2, and end part is set up as the 6th part, which is deducedfrom (9−4+1).

When alternately arranging scan cycle 1 and scan cycle 2, additionalbackward scan region K can be comprised to be arranged as described inthe second exemplary embodiment and the third exemplary embodimentabove, such that scanning continuity of a magnet can be guaranteed.

If the aforementioned scan region is set up, and the magnet is to scanalong the scan regions, a sputtering target can be uniformly eroded, asa result, utilization efficiency of the sputtering target can beremarkably improved.

In addition, as utilization efficiency of the sputtering target getsbetter, cost of manufacturing process of sputtering may also be reduced.

While the invention has been illustrated and described with reference tocertain exemplary embodiments thereof, it will be understood by thoseskilled in the art that various changes in form and details may be madetherein without departing from the spirit and scope of the invention asdefined by the appended claims and their equivalents.

What is claimed is:
 1. A sputtering method using a sputtering device,wherein an entire scan region is defined from one side of a sputteringtarget to the other side, and the sputtering target is scanned by movinga magnet back and forth along the entire scan region multiple times, themethod comprising, defining the entire scan region, which is divided byN (N is a positive integer) parts; defining multiple forward scanregions and multiple backward scan regions, which are arranged tocomprise at least some part of the divided entire scan region; definingscan cycle 1 and scan cycle 2, which are arranged by combinations ofseveral multiple forward scan regions and several multiple backward scanregions respectively, wherein the scan cycle 1 is arranged in the mannerthat a first forward scan region is defined from a 1st part out of the Nparts to a Pth part out of the N parts as a first start part and a firstend part respectively, and an Ath forward scan region is defined from anAth part out of the N parts to a (P+A−1)th part out of the N parts as anAth start part and an Ath end part respectively (1≤A≤(N/2),((N/2)+1)≤P<N, (P+A−1)≤N, wherein A and P are integers); arrangingmultiple forward scan regions of the scan cycle 2, in the reverse orderto the multiple forward scan regions arranged in the scan cycle 1; anddefining multiple backward scan regions arranged in the scan cycle 1 andthe scan cycle 2 respectively in the manner that a previous forward scanregion end part is subsequent backward scan region start part, and asubsequent forward scan region start part is a previous backward scanregion end part, such that a magnet moves with a continuous motion, andthe scan cycle 1 and the scan cycle 2 are alternately arranged appearingat least once respectively, such that the magnet moves according to thescan cycle 1 and the scan cycle
 2. 2. The sputtering method using asputtering device according to claim 1, wherein when alternatelyarranging the scan cycle 1 and the scan cycle 2, a backward scan regionafter a last forward scan region of a scan cycle is arranged in themanner that a last forward scan region end part of the scan cycle isdefined as a backward scan region start part, and a first forward scanregion start part of a next scan cycle is defined as a backward scanregion end part.
 3. The sputtering method using a sputtering deviceaccording to claim 1, wherein each width of the N parts is substantiallythe same as each other.
 4. The sputtering method using a sputteringdevice according to claim 1, wherein each width of the N parts issubstantially the same as the width of the sputtering target.
 5. Asputtering method of using a sputtering device, wherein an entire scanregion is defined from one side of a sputtering target to the otherside, and the sputtering target is scanned with a magnet moving back andforth along the entire scan region multiple times, the methodcomprising, defining the entire scan region, which is divided by N (N isa positive integer) parts; defining multiple forward scan regions andmultiple backward scan regions, which are alternately arranged tocomprise at least some part of the divided entire scan region; definingscan cycle 1 and scan cycle 2, which are arranged by combinations ofseveral multiple forward scan regions and several multiple backward scanregions respectively, wherein the scan cycle 1 is arranged in the mannerthat a first forward scan region is defined from a 1st part out of the Nparts to a Nth part out of the N parts as a first start part and a firstend part respectively, and an Ath forward scan region is defined from anAth part out of the N parts to a (N−A+1)th part out of the N parts as anAth start part and an Ath end part respectively (A≤(N/2) if N is an evennumber, A≤(N−1)/2 if N is an odd number, 1≤A≤(N/2), wherein A is aninteger); arranging multiple forward scan regions of the scan cycle 2,in the reverse order to multiple forward scan regions arranged in thescan cycle 1; and defining multiple backward scan regions arranged inthe scan cycle 1 and the scan cycle 2 respectively in the manner that aprevious forward scan region end part is a subsequent backward scanregion start part, and a subsequent forward scan region start part is aprevious backward scan region end part, such that a magnet has acontinuous motion, and the scan cycle 1 and the scan cycle 2 arealternately arranged appearing at least once respectively, such that themagnet moves according to the scan cycle 1 and the scan cycle
 2. 6. Thesputtering method using a sputtering device according to claim 5,wherein when alternately arranging the scan cycle 1 and the scan cycle2, a backward scan region after a last forward scan region of a scancycle is arranged in the manner that a last forward scam region end partof the scan cycle is defined as a backward scan region start part, and afirst forward scan region start part of a next scan cycle is defined asa backward scan region end part.
 7. The sputtering method using asputtering device according to claim 5, wherein each width of the Nparts is substantially the same as each other.
 8. The sputtering methodusing a sputtering device according to claim 5, wherein each width ofthe N parts is substantially the same as the width of the sputteringtarget.